All MOSFET. AOTL095A60 Datasheet

 

AOTL095A60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTL095A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TOLL

 AOTL095A60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTL095A60 Datasheet (PDF)

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 aotl095a60.pdf

AOTL095A60 AOTL095A60

AOTL095A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max

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