AOTL095A60 Datasheet and Replacement
Type Designator: AOTL095A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TOLL
AOTL095A60 substitution
AOTL095A60 Datasheet (PDF)
aotl095a60.pdf

AOTL095A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: AOB66616L , AOB66620L , AOB66811L , AOB66916L , AOB66919L , AOB66920L , AOB66935L , AOB780A70L , IRFB4115 , AOTL125A60 , AOTL130A60FD , AOTL160A60 , AOTL190A60 , AOTL42A60E , AOTL66215 , AOTL66401 , AOTL66515 .
Keywords - AOTL095A60 MOSFET datasheet
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History: DN3535 | RSD175N10



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