AOTL095A60 Datasheet and Replacement
Type Designator: AOTL095A60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TOLL
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AOTL095A60 Datasheet (PDF)
aotl095a60.pdf

AOTL095A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: JCS20N65WH | STP4N100 | OSG60R200PSZF | FQB6N80TM | SSI3N80A | STP601 | IRFS540
Keywords - AOTL095A60 MOSFET datasheet
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History: JCS20N65WH | STP4N100 | OSG60R200PSZF | FQB6N80TM | SSI3N80A | STP601 | IRFS540



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