All MOSFET. AOTL095A60 Datasheet

 

AOTL095A60 Datasheet and Replacement


   Type Designator: AOTL095A60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TOLL
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AOTL095A60 Datasheet (PDF)

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AOTL095A60

AOTL095A60TM 600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 140A Optimized switching parameters for better EMI RDS(ON),max

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History: JCS20N65WH | STP4N100 | OSG60R200PSZF | FQB6N80TM | SSI3N80A | STP601 | IRFS540

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