All MOSFET. AOTL42A60E Datasheet

 

AOTL42A60E Datasheet and Replacement


   Type Designator: AOTL42A60E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 367 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
   Package: TOLL
 

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AOTL42A60E Datasheet (PDF)

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AOTL42A60E

AOTL42A60ETM600V, a MOS N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 120A Optimized switching parameters for better EMI RDS(ON),max

Datasheet: AOB66920L , AOB66935L , AOB780A70L , AOTL095A60 , AOTL125A60 , AOTL130A60FD , AOTL160A60 , AOTL190A60 , AO3400 , AOTL66215 , AOTL66401 , AOTL66515 , AOTL66518 , AOTL66608 , AOTL66610 , AOTL66810 , AOTL66810Q .

History: TPC8027 | IRFP242

Keywords - AOTL42A60E MOSFET datasheet

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