AOTL42A60E Specs and Replacement
Type Designator: AOTL42A60E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 367 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
Package: TOLL
AOTL42A60E substitution
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AOTL42A60E datasheet
aotl42a60e.pdf
AOTL42A60E TM 600V, a MOS N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 120A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOB66920L, AOB66935L, AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60, IRF9540, AOTL66215, AOTL66401, AOTL66515, AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q
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