AOTL66401 Specs and Replacement

Type Designator: AOTL66401

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 400 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 3110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0007 Ohm

Package: TOLLA

AOTL66401 substitution

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AOTL66401 datasheet

 ..1. Size:377K  aosemi
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AOTL66401

AOTL66401 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:715K  aosemi
aotl66610.pdf pdf_icon

AOTL66401

AOTL66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:379K  aosemi
aotl66215.pdf pdf_icon

AOTL66401

AOTL66215 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:465K  aosemi
aotl66608.pdf pdf_icon

AOTL66401

AOTL66608 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOB780A70L, AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60, AOTL42A60E, AOTL66215, 2SK3878, AOTL66515, AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912

Keywords - AOTL66401 MOSFET specs

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