AOTL66515 Datasheet and Replacement
Type Designator: AOTL66515
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 428 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TOLLA
AOTL66515 substitution
AOTL66515 Datasheet (PDF)
aotl66515.pdf

AOTL66515TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 200A Area (SOA) RDS(ON) (at VGS=10V)
aotl66518.pdf

AOTL66518TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 214A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
aotl66610.pdf

AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aotl66215.pdf

AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
Datasheet: AOTL095A60 , AOTL125A60 , AOTL130A60FD , AOTL160A60 , AOTL190A60 , AOTL42A60E , AOTL66215 , AOTL66401 , 12N60 , AOTL66518 , AOTL66608 , AOTL66610 , AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q .
History: 2SK4146-S19-AY | SUM90N06-4M4P | UFZ24NL-TM3
Keywords - AOTL66515 MOSFET datasheet
AOTL66515 cross reference
AOTL66515 equivalent finder
AOTL66515 lookup
AOTL66515 substitution
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History: 2SK4146-S19-AY | SUM90N06-4M4P | UFZ24NL-TM3



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