AOTL66515. Аналоги и основные параметры
Наименование производителя: AOTL66515
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 428 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 720 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: TOLLA
Аналог (замена) для AOTL66515
- подборⓘ MOSFET транзистора по параметрам
AOTL66515 даташит
..1. Size:378K aosemi
aotl66515.pdf 

AOTL66515 TM 150V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 200A Area (SOA) RDS(ON) (at VGS=10V)
6.1. Size:370K aosemi
aotl66518.pdf 

AOTL66518 TM 150V N-Channel AlphaSGT General Description Product Summary VDS 150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 214A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
8.1. Size:715K aosemi
aotl66610.pdf 

AOTL66610 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:379K aosemi
aotl66215.pdf 

AOTL66215 TM 120V N-Channel AlphaSGT General Description Product Summary VDS 120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
8.3. Size:465K aosemi
aotl66608.pdf 

AOTL66608 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:369K aosemi
aotl66810.pdf 

AOTL66810 TM 80V N-Channel AlphaSGT General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)
8.5. Size:406K aosemi
aotl66912q.pdf 

AOTL66912Q TM 100V N-Channel AlphaSGT AEC-Q101 Qualified General Description Product Summary VDS 100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)
8.6. Size:658K aosemi
aotl66912.pdf 

AOTL66912 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operating area (SOA) RDS(ON) (at VGS=10V)
8.7. Size:377K aosemi
aotl66401.pdf 

AOTL66401 TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.8. Size:375K aosemi
aotl66914.pdf 

AOTL66914 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.9. Size:494K aosemi
aotl66915.pdf 

AOTL66915 TM 100V N-Channel AlphaSGT General Description Product Summary VDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339A shorter down time RDS(ON) (at VGS=10V)
8.10. Size:413K aosemi
aotl66810q.pdf 

AOTL66810Q TM 80V N-Channel AlphaSGT2 AEC-Q101 Qualified General Description Product Summary VDS 80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 445A Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
8.11. Size:384K aosemi
aotl66811.pdf 

AOTL66811 TM 80V N-Channel AlphaSGT2 General Description Product Summary VDS 80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 315A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.12. Size:369K aosemi
aotl66918.pdf 

AOTL66918 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V)
Другие IGBT... AOTL095A60, AOTL125A60, AOTL130A60FD, AOTL160A60, AOTL190A60, AOTL42A60E, AOTL66215, AOTL66401, STP75NF75, AOTL66518, AOTL66608, AOTL66610, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q