AOTL66810Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOTL66810Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 500
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6
V
|Id|ⓘ - Maximum Drain Current: 445
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 175
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 3300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00125
Ohm
Package: TOLLA
AOTL66810Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOTL66810Q
Datasheet (PDF)
..1. Size:413K aosemi
aotl66810q.pdf
AOTL66810QTM80V N-Channel AlphaSGT2AEC-Q101 QualifiedGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 445A Excellent gate charge x RDS(ON) product (FOM) RDS(ON) (at VGS=10V)
5.1. Size:369K aosemi
aotl66810.pdf
AOTL66810TM80V N-Channel AlphaSGTGeneral Description Product SummaryVDS80V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 420A Excellent gate charge x RDS(ON) product (FOM) PB-free lead plating, RoHS compliant RDS(ON) (at VGS=10V)
6.1. Size:384K aosemi
aotl66811.pdf
AOTL66811TM80V N-Channel AlphaSGT2General Description Product SummaryVDS80V AlphaSGT2TM N-Channel Power MOSFET ID (at VGS=10V) 315A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:715K aosemi
aotl66610.pdf
AOTL66610TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 350A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:379K aosemi
aotl66215.pdf
AOTL66215TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 305A Combined of low RDS(ON) and wide Safe Operating Area (SOA) RDS(ON) (at VGS=10V)
8.3. Size:465K aosemi
aotl66608.pdf
AOTL66608TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:378K aosemi
aotl66515.pdf
AOTL66515TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 150V Combined of low RDS(ON) and wide Safe Operating ID (at VGS=10V) 200A Area (SOA) RDS(ON) (at VGS=10V)
8.5. Size:406K aosemi
aotl66912q.pdf
AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)
8.6. Size:658K aosemi
aotl66912.pdf
AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)
8.7. Size:377K aosemi
aotl66401.pdf
AOTL66401TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 400A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.8. Size:375K aosemi
aotl66914.pdf
AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
8.9. Size:494K aosemi
aotl66915.pdf
AOTL66915TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Higher in-rush current enabled for faster start-up and ID (at VGS=10V) 339Ashorter down time RDS(ON) (at VGS=10V)
8.10. Size:369K aosemi
aotl66918.pdf
AOTL66918100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V)
8.11. Size:370K aosemi
aotl66518.pdf
AOTL66518TM150V N-Channel AlphaSGTGeneral Description Product SummaryVDS150V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 214A Combined of low RDS(ON) and wide safe operatiing area (SOA) RDS(ON) (at VGS=10V)
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