All MOSFET. AOTL66918 Datasheet

 

AOTL66918 Datasheet and Replacement


   Type Designator: AOTL66918
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 214 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 3200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TOLLA
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AOTL66918 Datasheet (PDF)

 ..1. Size:369K  aosemi
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AOTL66918

AOTL66918100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V)

 6.1. Size:406K  aosemi
 aotl66912q.pdf pdf_icon

AOTL66918

AOTL66912QTM100V N-Channel AlphaSGTAEC-Q101 QualifiedGeneral Description Product SummaryVDS100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V)

 6.2. Size:658K  aosemi
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AOTL66918

AOTL66912TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operatingarea (SOA) RDS(ON) (at VGS=10V)

 6.3. Size:375K  aosemi
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AOTL66918

AOTL66914TM100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

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History: CHM85A3PAGP | SFFX054Z | TK7P65W

Keywords - AOTL66918 MOSFET datasheet

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