AOTL66918 PDF Specs and Replacement
Type Designator: AOTL66918
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 214 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 3200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: TOLLA
AOTL66918 substitution
AOTL66918 PDF Specs
aotl66918.pdf
AOTL66918 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
aotl66912q.pdf
AOTL66912Q TM 100V N-Channel AlphaSGT AEC-Q101 Qualified General Description Product Summary VDS 100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V) ... See More ⇒
aotl66912.pdf
AOTL66912 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operating area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒
aotl66914.pdf
AOTL66914 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AOTL66610 , AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , K4145 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C .
Keywords - AOTL66918 MOSFET specs
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