AOTL66918 Datasheet. Specs and Replacement

Type Designator: AOTL66918  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 214 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 3200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TOLLA

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AOTL66918 datasheet

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AOTL66918

AOTL66918 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 100V Combined of low RDS(ON) and wide safe operatiing area ID (at VGS=10V) 214A (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

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AOTL66918

AOTL66912Q TM 100V N-Channel AlphaSGT AEC-Q101 Qualified General Description Product Summary VDS 100V AEC-Q101 Qualified ID (at VGS=10V) 370A Trench Power MOSFET - AlphaSGTTM technology Low Rds(on) RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:658K  aosemi
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AOTL66918

AOTL66912 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 380A Combination of low RDS(ON) and wide safe operating area (SOA) RDS(ON) (at VGS=10V) ... See More ⇒

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AOTL66918

AOTL66914 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V AlphaSGTTM N-Channel Power MOSFET ID (at VGS=10V) 220A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOTL66610, AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q, AOTL66914, AOTL66915, P55NF06, AOTS21115C, AOTS21311C, AOTS21313C, AOTS21319C, AOTS26108, AOTS32334C, AOTS32338C, AOTE21115C

Keywords - AOTL66918 MOSFET specs

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