AOTS21115C Datasheet. Specs and Replacement

Type Designator: AOTS21115C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSOP-6L

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AOTS21115C datasheet

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AOTS21115C

AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

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AOTS21115C

AOTS21313C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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AOTS21115C

AOTS21311C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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AOTS21115C

AOTS21319C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

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Detailed specifications: AOTL66810, AOTL66810Q, AOTL66811, AOTL66912, AOTL66912Q, AOTL66914, AOTL66915, AOTL66918, SPP20N60C3, AOTS21311C, AOTS21313C, AOTS21319C, AOTS26108, AOTS32334C, AOTS32338C, AOTE21115C, AOTE32136C

Keywords - AOTS21115C MOSFET specs

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