AOTS21115C Datasheet and Replacement
Type Designator: AOTS21115C
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TSOP-6L
AOTS21115C substitution
AOTS21115C Datasheet (PDF)
aots21115c.pdf

AOTS21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)
aots21313c.pdf

AOTS21313C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -7.3A Low Gate Charge RDS(ON) (at VGS=-10V)
aots21311c.pdf

AOTS21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -5.9A Low Gate Charge RDS(ON) (at VGS=-10V)
aots21319c.pdf

AOTS21319C30V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -2.7A Low Gate Charge RDS(ON) (at VGS=-10V)
Datasheet: AOTL66810 , AOTL66810Q , AOTL66811 , AOTL66912 , AOTL66912Q , AOTL66914 , AOTL66915 , AOTL66918 , TK10A60D , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , AOTE32136C .
History: SM2337PSA | MDHT4N25URH | IPB049N06L3G | IXFM67N10 | SUN05A50ZD | AUIRF7739L2TR
Keywords - AOTS21115C MOSFET datasheet
AOTS21115C cross reference
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History: SM2337PSA | MDHT4N25URH | IPB049N06L3G | IXFM67N10 | SUN05A50ZD | AUIRF7739L2TR



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