AOTE21115C Datasheet and Replacement
Type Designator: AOTE21115C
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TSSOP-8L
AOTE21115C substitution
AOTE21115C Datasheet (PDF)
aote21115c.pdf

AOTE21115C20V P-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.9A Low Gate Charge RDS(ON) (at VGS=-4.5V)
Datasheet: AOTL66918 , AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AO4407 , AOTE32136C , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D .
History: IPS050N03LG | AP4232AGM | HM4606D | AP2602GY | 11NM70G-TM3-T | GP2M007A065XG | 2SJ628
Keywords - AOTE21115C MOSFET datasheet
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History: IPS050N03LG | AP4232AGM | HM4606D | AP2602GY | 11NM70G-TM3-T | GP2M007A065XG | 2SJ628



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