AOTE21115C Datasheet. Specs and Replacement

Type Designator: AOTE21115C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TSSOP-8L

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AOTE21115C datasheet

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AOTE21115C

AOTE21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.9A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

Detailed specifications: AOTL66918, AOTS21115C, AOTS21311C, AOTS21313C, AOTS21319C, AOTS26108, AOTS32334C, AOTS32338C, 12N60, AOTE32136C, AOUS66414, AOUS66416, AOUS66616, AOUS66620, AOUS66920, AOUS66923, FXN0603D

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