All MOSFET. AOTE32136C Datasheet

 

AOTE32136C MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTE32136C
   Marking Code: 32136C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8L

 AOTE32136C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTE32136C Datasheet (PDF)

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 aote32136c.pdf

AOTE32136C AOTE32136C

AOTE32136C20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 7A Low Gate Charge RDS(ON) (at VGS=4.5V)

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