All MOSFET. AOTE32136C Datasheet

 

AOTE32136C Datasheet and Replacement


   Type Designator: AOTE32136C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TSSOP-8L
 

 AOTE32136C substitution

   - MOSFET ⓘ Cross-Reference Search

 

AOTE32136C Datasheet (PDF)

 ..1. Size:364K  aosemi
 aote32136c.pdf pdf_icon

AOTE32136C

AOTE32136C20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 7A Low Gate Charge RDS(ON) (at VGS=4.5V)

Datasheet: AOTS21115C , AOTS21311C , AOTS21313C , AOTS21319C , AOTS26108 , AOTS32334C , AOTS32338C , AOTE21115C , IRLB4132 , AOUS66414 , AOUS66416 , AOUS66616 , AOUS66620 , AOUS66920 , AOUS66923 , FXN0603D , FXN0607CN .

History: NTHL040N65S3F | AP6679GP-HF | TPW60R080M | AP6679GI | BM3416E | SIE820DF | IPD50N03S2L-06

Keywords - AOTE32136C MOSFET datasheet

 AOTE32136C cross reference
 AOTE32136C equivalent finder
 AOTE32136C lookup
 AOTE32136C substitution
 AOTE32136C replacement

 

 
Back to Top

 


 
.