FXN0304C Specs and Replacement

Type Designator: FXN0304C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 138 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 102 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO220

FXN0304C substitution

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FXN0304C datasheet

 ..1. Size:485K  cn fx-semi
 fxn0304c.pdf pdf_icon

FXN0304C

FuXin Semiconductor Co., Ltd. FXN0304C Series Rev.A General Description Features The FXN0304C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 120A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applica... See More ⇒

 8.1. Size:362K  cn fx-semi
 fxn0303d.pdf pdf_icon

FXN0304C

FuXin Semiconductor Co., Ltd. FXN0303D Series Rev.A General Description Features The FXN0303D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

 8.2. Size:903K  cn fx-semi
 fxn0305c.pdf pdf_icon

FXN0304C

FuXin Semiconductor Co., Ltd. FXN0305C Series Rev.A General Description Features The FXN0305C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 240A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

Detailed specifications: FXN0507C, FXN0305C, FXN0404C, FXN0405C, FXN0406C, FXN0205C, FXN0206C, FXN0303D, 2N60, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F, FXN18N20C, FXN18N50F, FXN20N50F

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