FXN0304C - Даташиты. Аналоги. Основные параметры
Наименование производителя: FXN0304C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 138 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 102 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 940 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: TO220
Аналог (замена) для FXN0304C
FXN0304C Datasheet (PDF)
fxn0304c.pdf
FuXin Semiconductor Co., Ltd.FXN0304C Series Rev.AGeneral Description FeaturesThe FXN0304C uses advanced Silicon s MOSFET Technology, whichVDS = 40Vprovides high performance in on-state resistance, fast switchingID = 120A @VGS = 10Vperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial applica
fxn0303d.pdf
FuXin Semiconductor Co., Ltd. FXN0303D Series Rev.A General Description Features The FXN0303D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 110A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
fxn0305c.pdf
FuXin Semiconductor Co., Ltd. FXN0305C Series Rev.A General Description Features The FXN0305C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 240A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri
Другие MOSFET... FXN0507C , FXN0305C , FXN0404C , FXN0405C , FXN0406C , FXN0205C , FXN0206C , FXN0303D , 2N60 , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , FXN20N50F .
History: FXN0507C
History: FXN0507C
Список транзисторов
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