FXN20N50F Datasheet and Replacement
Type Designator: FXN20N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16.4 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 360 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
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FXN20N50F Datasheet (PDF)
fxn20n50f.pdf
FuXin Semiconductor Co., Ltd.FXN20N50F Series Rev.AGeneral Description FeaturesThe FXN20N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 20A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn20s60f.pdf
FuXin Semiconductor Co., Ltd. FXN20S60FSeries Rev.AGeneral Description Features The FXN20S60Fuses advanced Silicon s MOSFET Technology, which V = 600V DSprovides high performance in on-state resistance, fast switching ID =20A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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