FXN20N50F Specs and Replacement
Type Designator: FXN20N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 360 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
FXN20N50F substitution
FXN20N50F datasheet
fxn20n50f.pdf
FuXin Semiconductor Co., Ltd. FXN20N50F Series Rev.A General Description Features The FXN20N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒
fxn20s60f.pdf
FuXin Semiconductor Co., Ltd. FXN20S60FSeries Rev.A General Description Features The FXN20S60Fuses advanced Silicon s MOSFET Technology, which V = 600V DS provides high performance in on-state resistance, fast switching ID =20A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒
Detailed specifications: FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , 7N60 , FXN0704F , FXN0706C , FXN0707C , FXN0707CN , FXN4613F , FXN4615F , FXN4620F , FXN4625F .
Keywords - FXN20N50F MOSFET specs
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