All MOSFET. FXN20N50F Datasheet

 

FXN20N50F Datasheet and Replacement


   Type Designator: FXN20N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F
 

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FXN20N50F Datasheet (PDF)

 ..1. Size:485K  cn fx-semi
 fxn20n50f.pdf pdf_icon

FXN20N50F

FuXin Semiconductor Co., Ltd.FXN20N50F Series Rev.AGeneral Description FeaturesThe FXN20N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 20A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a

 9.1. Size:557K  cn fx-semi
 fxn20s60f.pdf pdf_icon

FXN20N50F

FuXin Semiconductor Co., Ltd. FXN20S60FSeries Rev.AGeneral Description Features The FXN20S60Fuses advanced Silicon s MOSFET Technology, which V = 600V DSprovides high performance in on-state resistance, fast switching ID =20A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

Datasheet: FXN0304C , FXN9N45F , FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , MMIS60R580P , FXN0704F , FXN0706C , FXN0707C , FXN0707CN , FXN4613F , FXN4615F , FXN4620F , FXN4625F .

History: IRF513 | P1503BVG

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