FXN7N65F Specs and Replacement

Type Designator: FXN7N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO220F

FXN7N65F substitution

- MOSFET ⓘ Cross-Reference Search

 

FXN7N65F datasheet

 ..1. Size:362K  cn fx-semi
 fxn7n65f.pdf pdf_icon

FXN7N65F

FXN7N65F Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 660 - - V Gate Threshold Voltage VGS(th) - 2.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V 1.0 - - A VGS = 30V, VDS = 0V - 0.1 Gate Leakage Current... See More ⇒

 7.1. Size:1187K  cn fx-semi
 fxn7n65d.pdf pdf_icon

FXN7N65F

FuXin Semiconductor Co., Ltd. FXN7N65D Series Rev.A General Description Features The FXN7N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 7A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

Detailed specifications: FXN0704F, FXN0706C, FXN0707C, FXN0707CN, FXN4613F, FXN4615F, FXN4620F, FXN4625F, EMB04N03H, FXN8N60F, FXN8N65D, FXN8N65F, FXN10N06D, FXN10N50F, FXN10N65F, FXN10N80F, FXN5N65D

Keywords - FXN7N65F MOSFET specs

 FXN7N65F cross reference

 FXN7N65F equivalent finder

 FXN7N65F pdf lookup

 FXN7N65F substitution

 FXN7N65F replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.