FXN10N50F PDF and Equivalents Search

 

FXN10N50F PDF Specs and Replacement


   Type Designator: FXN10N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220F
 

 FXN10N50F substitution

   - MOSFET ⓘ Cross-Reference Search

 

FXN10N50F PDF Specs

 ..1. Size:960K  cn fx-semi
fxn10n50f.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

 8.1. Size:734K  cn fx-semi
fxn10n65f.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

 8.2. Size:478K  cn fx-semi
fxn10n80f.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

 8.3. Size:858K  cn fx-semi
fxn10n06d.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.A General Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

Detailed specifications: FXN4615F , FXN4620F , FXN4625F , FXN7N65F , FXN8N60F , FXN8N65D , FXN8N65F , FXN10N06D , 60N06 , FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C .

History: HM40N10KA | IRFP260 | 2P525A9

Keywords - FXN10N50F MOSFET specs

 FXN10N50F cross reference
 FXN10N50F equivalent finder
 FXN10N50F pdf lookup
 FXN10N50F substitution
 FXN10N50F replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.