FXN10N50F Datasheet. Specs and Replacement

Type Designator: FXN10N50F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220F

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FXN10N50F datasheet

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FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N50F Series Rev.A General Description Features The 10N50Fuses advanced Silicon s MOSFET T echnology, which FXN VDS = 500V provides high performance in on-state resistance, fast switching ID = 10A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

 8.1. Size:734K  cn fx-semi
 fxn10n65f.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N65F Series Rev.A General Description Features The FXN10N65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

 8.2. Size:478K  cn fx-semi
 fxn10n80f.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N80F Series Rev.A General Description Features The FXN10N80F uses advanced Silicon s MOSFET Technology, which V = 800V DS provides high performance in on-state resistance, fast switching ID = 10A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial a... See More ⇒

 8.3. Size:858K  cn fx-semi
 fxn10n06d.pdf pdf_icon

FXN10N50F

FuXin Semiconductor Co., Ltd. FXN10N06D Series Rev.A General Description Features The FXN10N06D uses advanced Silicon s MOSFET Technology, which VDS = 60V provides high performance in on-state resistance, fast switching ID = 52A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

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Detailed specifications: FXN4615F, FXN4620F, FXN4625F, FXN7N65F, FXN8N60F, FXN8N65D, FXN8N65F, FXN10N06D, IRF9640, FXN10N65F, FXN10N80F, FXN5N65D, FXN5N65F, FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.