FXN65S55T Datasheet. Specs and Replacement

Type Designator: FXN65S55T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 420 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO247

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FXN65S55T datasheet

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FXN65S55T

FuXin Semiconductor Co., Ltd. Rev.A FXN65S55T Features General Description VDS = 550V The FXN65S55T uses advanced Silicon s MOSFET Technology, ID = 65A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON) ... See More ⇒

Detailed specifications: FXN8N65F, FXN10N06D, FXN10N50F, FXN10N65F, FXN10N80F, FXN5N65D, FXN5N65F, FXN5N65FM, IRF840, FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, FXN4607F, FXN4609F, FXN4611F, FXN4628F

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