FXN65S55T Datasheet and Replacement
Type Designator: FXN65S55T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 420 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 12 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO247
FXN65S55T substitution
FXN65S55T Datasheet (PDF)
fxn65s55t.pdf
FuXin Semiconductor Co., Ltd. Rev.A FXN65S55T Features General Description VDS = 550V The FXN65S55T uses advanced Silicons MOSFET Technology, ID = 65A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)
Datasheet: FXN8N65F , FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , IRF740 , FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , FXN4611F , FXN4628F .
History: FXN5N65F
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History: FXN5N65F
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