FXN65S55T MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN65S55T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 420 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 65 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 12 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO247
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FXN65S55T Datasheet (PDF)
..1. Size:309K cn fx-semi
fxn65s55t.pdf
fxn65s55t.pdf
FuXin Semiconductor Co., Ltd. Rev.A FXN65S55T Features General Description VDS = 550V The FXN65S55T uses advanced Silicons MOSFET Technology, ID = 65A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)
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