All MOSFET. FXN65S55T Datasheet

 

FXN65S55T Datasheet and Replacement


   Type Designator: FXN65S55T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 420 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 85 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TO247
 

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FXN65S55T Datasheet (PDF)

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FXN65S55T

FuXin Semiconductor Co., Ltd. Rev.A FXN65S55T Features General Description VDS = 550V The FXN65S55T uses advanced Silicons MOSFET Technology, ID = 65A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)

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Keywords - FXN65S55T MOSFET datasheet

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