All MOSFET. FXN11N45F Datasheet

 

FXN11N45F Datasheet and Replacement


   Type Designator: FXN11N45F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO220F
 

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FXN11N45F Datasheet (PDF)

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FXN11N45F

FuXin Semiconductor Co., Ltd. FXN11N45F Series Rev.A General Description Features The FXN11N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in

Datasheet: FXN07N10NS , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , FXN4611F , FXN4628F , IRF1404 , FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H , FXN40N20C , FXN13N45F .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452 | HM120N04D

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