FXN11N45F MOSFET. Datasheet pdf. Equivalent
Type Designator: FXN11N45F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO220F
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FXN11N45F Datasheet (PDF)
..1. Size:713K cn fx-semi
fxn11n45f.pdf
fxn11n45f.pdf
FuXin Semiconductor Co., Ltd. FXN11N45F Series Rev.A General Description Features The FXN11N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 11A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
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