FXN11N45F Specs and Replacement

Type Designator: FXN11N45F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO220F

FXN11N45F substitution

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FXN11N45F datasheet

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FXN11N45F

FuXin Semiconductor Co., Ltd. FXN11N45F Series Rev.A General Description Features The FXN11N45F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 11A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in... See More ⇒

Detailed specifications: FXN07N10NS, FXN0808C, FXN08S65D, FXN09150C, FXN4607F, FXN4609F, FXN4611F, FXN4628F, IRF1404, FXN12N60FS, FXN12N65F, FXN12S65F, FXN32N55T, FXN40N03C, FXN40N03H, FXN40N20C, FXN13N45F

Keywords - FXN11N45F MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.