FXN23S65F Specs and Replacement
Type Designator: FXN23S65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220F
FXN23S65F substitution
FXN23S65F datasheet
fxn23s65f.pdf
FuXin Semiconductor Co., Ltd. FXN23S65F Series Rev.A General Description Features The FXN23S65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID =23A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒
Detailed specifications: FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , FXN20S60F , IRF9540 , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
