FXN23S65F Datasheet and Replacement
Type Designator: FXN23S65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 42 nC
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 75 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220F
FXN23S65F substitution
FXN23S65F Datasheet (PDF)
fxn23s65f.pdf
FuXin Semiconductor Co., Ltd. FXN23S65F Series Rev.AGeneral Description Features The FXN23S65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID =23A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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