FXN23S65F Datasheet. Specs and Replacement

Type Designator: FXN23S65F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO220F

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FXN23S65F datasheet

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FXN23S65F

FuXin Semiconductor Co., Ltd. FXN23S65F Series Rev.A General Description Features The FXN23S65F uses advanced Silicon s MOSFET Technology, which V = 650V DS provides high performance in on-state resistance, fast switching ID =23A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in indu... See More ⇒

Detailed specifications: FXN13N50C, FXN13N50K, FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, FXN20S60F, IRF4905, FXN25N50F, FXN25S55GF, FXN28N50F, FXN28N50P, FXN28N50T, FXN28S50F, FXN15N50F, FXN2N60D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.