FXN23S65F Datasheet and Replacement
Type Designator: FXN23S65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO220F
- MOSFET Cross-Reference Search
FXN23S65F Datasheet (PDF)
..1. Size:680K cn fx-semi
fxn23s65f.pdf
fxn23s65f.pdf
FuXin Semiconductor Co., Ltd. FXN23S65F Series Rev.AGeneral Description Features The FXN23S65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID =23A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
Keywords - FXN23S65F MOSFET datasheet
FXN23S65F
cross reference
FXN23S65F
equivalent finder
FXN23S65F
lookup
FXN23S65F
substitution
FXN23S65F
replacement
