All MOSFET. FXN23S65F Datasheet

 

FXN23S65F Datasheet and Replacement


   Type Designator: FXN23S65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO220F
 

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FXN23S65F Datasheet (PDF)

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FXN23S65F

FuXin Semiconductor Co., Ltd. FXN23S65F Series Rev.AGeneral Description Features The FXN23S65F uses advanced Silicon s MOSFET Technology, which V = 650V DSprovides high performance in on-state resistance, fast switching ID =23A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

Datasheet: FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , FXN20S60F , K3569 , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D .

History: FQD5P20TM | IRFIBC30GPBF | FMR28N50E | IRFIB7N50APBF | IXFP3N50PM | MS70N03

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