FXN25N50F Datasheet and Replacement
Type Designator: FXN25N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1420 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO220F
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FXN25N50F Datasheet (PDF)
fxn25n50f.pdf
FuXin Semiconductor Co., Ltd.FXN25N50F Series Rev.AGeneral Description FeaturesThe FXN25N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =25A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap
fxn25s55gf.pdf
1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 550 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 550V, VGS = 0V - - 1 A Ga
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