All MOSFET. FXN25N50F Datasheet

 

FXN25N50F Datasheet and Replacement


   Type Designator: FXN25N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 98 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO220F
 

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FXN25N50F Datasheet (PDF)

 ..1. Size:573K  cn fx-semi
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FXN25N50F

FuXin Semiconductor Co., Ltd.FXN25N50F Series Rev.AGeneral Description FeaturesThe FXN25N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =25A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap

 9.1. Size:337K  cn fx-semi
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FXN25N50F

1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 550 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 550V, VGS = 0V - - 1 A Ga

Datasheet: FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , FXN20S60F , FXN23S65F , 2N7000 , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D , FXN30N50F .

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