FXN25N50F PDF and Equivalents Search

 

FXN25N50F Specs and Replacement

Type Designator: FXN25N50F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 1420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO220F

FXN25N50F substitution

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FXN25N50F datasheet

 ..1. Size:573K  cn fx-semi
 fxn25n50f.pdf pdf_icon

FXN25N50F

FuXin Semiconductor Co., Ltd. FXN25N50F Series Rev.A General Description Features The FXN25N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =25A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap... See More ⇒

 9.1. Size:337K  cn fx-semi
 fxn25s55gf.pdf pdf_icon

FXN25N50F

1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 550 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 550V, VGS = 0V - - 1 A Ga... See More ⇒

Detailed specifications: FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , FXN20S60F , FXN23S65F , AON7408 , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D , FXN30N50F .

Keywords - FXN25N50F MOSFET specs

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