FXN25S55GF Datasheet. Specs and Replacement

Type Designator: FXN25S55GF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO220F

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FXN25S55GF datasheet

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FXN25S55GF

1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250 A, VGS = 0V 550 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250 A Drain Cut-Off Current IDSS VDS = 550V, VGS = 0V - - 1 A Ga... See More ⇒

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FXN25S55GF

FuXin Semiconductor Co., Ltd. FXN25N50F Series Rev.A General Description Features The FXN25N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID =25A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial ap... See More ⇒

Detailed specifications: FXN15N06D, FXN30S55C, FXN30S55F, FXN30S60F, FXN30S60T, FXN20S60F, FXN23S65F, FXN25N50F, STP75NF75, FXN28N50F, FXN28N50P, FXN28N50T, FXN28S50F, FXN15N50F, FXN2N60D, FXN30N50F, FXN30N50T

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