All MOSFET. FXN25S55GF Datasheet

 

FXN25S55GF Datasheet and Replacement


   Type Designator: FXN25S55GF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO220F
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FXN25S55GF Datasheet (PDF)

 ..1. Size:337K  cn fx-semi
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FXN25S55GF
FXN25S55GF

1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 550 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 550V, VGS = 0V - - 1 A Ga

 9.1. Size:573K  cn fx-semi
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FXN25S55GF
FXN25S55GF

FuXin Semiconductor Co., Ltd.FXN25N50F Series Rev.AGeneral Description FeaturesThe FXN25N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =25A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap

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