FXN2N60D Specs and Replacement
Type Designator: FXN2N60D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
Package: TO252
FXN2N60D substitution
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FXN2N60D datasheet
fxn2n60d.pdf
FuXin Semiconductor Co., Ltd. FXN2N60D Series Rev.A General Description Features The FXN2N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 2.3A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industr... See More ⇒
Detailed specifications: FXN23S65F , FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , AO3401 , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB .
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