FXN4N65D MOSFET Datasheet: N-Ch, 650V, 2.8A. Full specification with pinout and replacement list

FXN4N65D Specs and Replacement

Type Designator: FXN4N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.6 nS

Cossⓘ - Output Capacitance: 48 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO252

FXN4N65D substitution

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FXN4N65D datasheet

..1. Size:472K cn fx-semi
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FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

8.1. Size:353K cn fx-semi
fxn4n60d.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN4N60D Series Rev.A General Description Features The FXN4N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

Detailed specifications: FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D , FXN30N50F , FXN30N50T , FXN9N40C , FXN4N60D , SKD502T , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C , FXN0204CQ , FXN100S55T , FXN9N20C , 630 .