All MOSFET. FXN4N65D Datasheet

 

FXN4N65D Datasheet and Replacement


   Type Designator: FXN4N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 8.5 nC
   tr ⓘ - Rise Time: 24.6 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO252
 

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FXN4N65D Datasheet (PDF)

 ..1. Size:472K  cn fx-semi
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FXN4N65D

FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 8.1. Size:353K  cn fx-semi
 fxn4n60d.pdf pdf_icon

FXN4N65D

FuXin Semiconductor Co., Ltd. FXN4N60D Series Rev.A General Description Features The FXN4N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - FXN4N65D MOSFET datasheet

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