FXN4N65D Datasheet. Specs and Replacement

Type Designator: FXN4N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.6 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO252

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FXN4N65D datasheet

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FXN4N65D

FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

 8.1. Size:353K  cn fx-semi
 fxn4n60d.pdf pdf_icon

FXN4N65D

FuXin Semiconductor Co., Ltd. FXN4N60D Series Rev.A General Description Features The FXN4N60D uses advanced Silicon s MOSFET Technology, which VDS = 600V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

Detailed specifications: FXN28N50T, FXN28S50F, FXN15N50F, FXN2N60D, FXN30N50F, FXN30N50T, FXN9N40C, FXN4N60D, IRLB4132, FXN7N65D, CRJQ99N65G2, LSD07N80A-VB, FXN0204C, FXN0204CQ, FXN100S55T, FXN9N20C, 630

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs