All MOSFET. FDH45N50F Datasheet

 

FDH45N50F Datasheet and Replacement


   Type Designator: FDH45N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO247
 

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FDH45N50F Datasheet (PDF)

 ..1. Size:513K  fairchild semi
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FDH45N50F

November 2013FDH45N50FN-Channel UniFETTM FRFET MOSFET500 V, 45 A, 120 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 105 m (Typ.) @ VGS = 10 V, ID = 22.5 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better swi

 ..2. Size:211K  inchange semiconductor
 fdh45n50f.pdf pdf_icon

FDH45N50F

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor FDH45N50FFEATURESWith TO-247 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 , FQPF6N80T , FDH50N50 , FQPF6N90C , FQPF70N10 , SKD502T , FQPF7N60 , FDN5632NF085 , FQPF7N65C , FQPF7N80C , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C .

History: IRC254 | FX6ASJ-3 | IRF9310PBF-1 | IRF9317PBF | SMC2342A

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