FDH45N50F PDF and Equivalents Search

 

FDH45N50F Specs and Replacement

Type Designator: FDH45N50F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO247

FDH45N50F substitution

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FDH45N50F datasheet

 ..1. Size:513K  fairchild semi
 fdh45n50f.pdf pdf_icon

FDH45N50F

November 2013 FDH45N50F N-Channel UniFETTM FRFET MOSFET 500 V, 45 A, 120 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 105 m (Typ.) @ VGS = 10 V, ID = 22.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 105 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better swi... See More ⇒

 ..2. Size:211K  inchange semiconductor
 fdh45n50f.pdf pdf_icon

FDH45N50F

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FDH45N50F FEATURES With TO-247 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

Detailed specifications: FDMC8296 , FQPF65N06 , FQPF6N80C , FDMS8880 , FQPF6N80T , FDH50N50 , FQPF6N90C , FQPF70N10 , RFP50N06 , FQPF7N60 , FDN5632NF085 , FQPF7N65C , FQPF7N80C , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C .

History: FQPF70N10

Keywords - FDH45N50F MOSFET specs

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