DH0159F Datasheet. Specs and Replacement
Type Designator: DH0159F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO220F
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DH0159F datasheet
dh0159 dh0159f dh0159b dh0159d dh0159i dh0159e.pdf
DH0159/DH0159F/DH0159B DH0159D/DH0159I/DH0159E 59A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 13.0m DS(on) (TYP) standard. 1 3 S I = 59A D 2 Features Low on resistance ... See More ⇒
Detailed specifications: D4N70, D4N80, D50N06, D5N50, DH0159, DH0159B, DH0159D, DH0159E, IRF2807, DH0159I, DH019N04, DH019N04B, DH019N04D, DH019N04E, 20N65D, 23N50D, 5N65C
Keywords - DH0159F MOSFET specs
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