DH0159I Specs and Replacement
Type Designator: DH0159I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO262
DH0159I substitution
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DH0159I datasheet
dh0159 dh0159f dh0159b dh0159d dh0159i dh0159e.pdf
DH0159/DH0159F/DH0159B DH0159D/DH0159I/DH0159E 59A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 13.0m DS(on) (TYP) standard. 1 3 S I = 59A D 2 Features Low on resistance ... See More ⇒
Detailed specifications: D4N80 , D50N06 , D5N50 , DH0159 , DH0159B , DH0159D , DH0159E , DH0159F , 5N60 , DH019N04 , DH019N04B , DH019N04D , DH019N04E , 20N65D , 23N50D , 5N65C , 60N10B .
Keywords - DH0159I MOSFET specs
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