All MOSFET. DH019N04 Datasheet

 

DH019N04 Datasheet and Replacement


   Type Designator: DH019N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 784 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO220
 

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DH019N04 Datasheet (PDF)

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DH019N04

DH019N04/DH019N04F/DH019N04IDH019N04E/DH019N04B/DH019N04D250A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2mDS(on) (TYP)standard.13 SI = 250AD2 Features Fast switchin

Datasheet: D50N06 , D5N50 , DH0159 , DH0159B , DH0159D , DH0159E , DH0159F , DH0159I , SKD502T , DH019N04B , DH019N04D , DH019N04E , 20N65D , 23N50D , 5N65C , 60N10B , 60N10D .

History: FQD5N60CTF | IXFA22N60P3 | TMP6N70 | SE150180GTS | IRF644 | HBS170 | TMD3N50Z

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