All MOSFET. DH019N04B Datasheet

 

DH019N04B Datasheet and Replacement


   Type Designator: DH019N04B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 183 nC
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 784 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO251
 

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DH019N04B Datasheet (PDF)

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DH019N04B

DH019N04/DH019N04F/DH019N04IDH019N04E/DH019N04B/DH019N04D250A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2mDS(on) (TYP)standard.13 SI = 250AD2 Features Fast switchin

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