DH019N04B Datasheet. Specs and Replacement

Type Designator: DH019N04B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 179 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 784 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO251

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DH019N04B datasheet

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DH019N04B

DH019N04/DH019N04F/DH019N04I DH019N04E/DH019N04B/DH019N04D 250A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2m DS(on) (TYP) standard. 1 3 S I = 250A D 2 Features Fast switchin... See More ⇒

Detailed specifications: D5N50, DH0159, DH0159B, DH0159D, DH0159E, DH0159F, DH0159I, DH019N04, STF13NM60N, DH019N04D, DH019N04E, 20N65D, 23N50D, 5N65C, 60N10B, 60N10D, 60N10E

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