All MOSFET. HYG035N10NS2B Datasheet

 

HYG035N10NS2B Datasheet and Replacement


   Type Designator: HYG035N10NS2B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 2420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO263
 

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HYG035N10NS2B Datasheet (PDF)

 ..1. Size:716K  hymexa
 hyg035n10ns2p hyg035n10ns2b.pdf pdf_icon

HYG035N10NS2B

HYG035N10NS2P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/180A RDS(ON)=3.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters Motor control N-Channel MOSFET Ordering and

 7.1. Size:1055K  1
 hyg035n02ka1c2.pdf pdf_icon

HYG035N10NS2B

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

 7.2. Size:1335K  1
 hyg035n06ls1c2.pdf pdf_icon

HYG035N10NS2B

HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric

 7.3. Size:1055K  hymexa
 hyg035n02ka1c2.pdf pdf_icon

HYG035N10NS2B

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

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Datasheet: 60N10B , 60N10D , 60N10E , 60N10F , 60N10I , AOB413 , B110N04 , HYG035N10NS2P , IRFZ48N , JMTE070N07A , DH012N03D , DH012N03E , DH012N03F , DH012N03I , DH012N03P , DH012N03U , DH019N04F .

History: SFF9140J

Keywords - HYG035N10NS2B MOSFET datasheet

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