HYG035N10NS2B MOSFET Datasheet: N-Ch, 100V, 180A. Full specification with pinout and replacement list

HYG035N10NS2B Specs and Replacement

Type Designator: HYG035N10NS2B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 99 nS

Cossⓘ - Output Capacitance: 2420 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

HYG035N10NS2B substitution

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HYG035N10NS2B datasheet

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HYG035N10NS2P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/180A RDS(ON)=3.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters Motor control N-Channel MOSFET Ordering and ... See More ⇒

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HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S... See More ⇒

7.2. Size:1335K 1
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HYG035N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 65V/90A D D D D D D D D RDS(ON)= 2.9m (typ.) @VGS = 10V RDS(ON)= 4.7m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Motor drive for electric... See More ⇒

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