DH019N04I MOSFET Datasheet: N-Ch, 40V, 250A. Full specification with pinout and replacement list

DH019N04I Specs and Replacement

Type Designator: DH019N04I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 255 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 784 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO262

DH019N04I substitution

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DH019N04I datasheet

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DH019N04/DH019N04F/DH019N04I DH019N04E/DH019N04B/DH019N04D 250A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2m DS(on) (TYP) standard. 1 3 S I = 250A D 2 Features Fast switchin... See More ⇒

Detailed specifications: JMTE070N07A, DH012N03D, DH012N03E, DH012N03F, DH012N03I, DH012N03P, DH012N03U, DH019N04F, AON7403, DH020N03, DH020N03B, DH020N03D, DH020N03E, B25N10, B2N65, B4N60, B4N65