DH020N03E PDF and Equivalents Search

 

DH020N03E Specs and Replacement

Type Designator: DH020N03E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 787 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: TO263

DH020N03E substitution

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DH020N03E datasheet

 ..1. Size:1166K  cn wxdh
 dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf pdf_icon

DH020N03E

DH020N03/DH020N03F/DH020N03I/ DH020N03E/DH020N03B/DH020N03D 200A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.0m DS(on) (TYP) standard. 1 3 S I = 200A D 2 Features Low on res... See More ⇒

 6.1. Size:704K  cn wxdh
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DH020N03E

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Detailed specifications: DH012N03I, DH012N03P, DH012N03U, DH019N04F, DH019N04I, DH020N03, DH020N03B, DH020N03D, MMIS60R580P, B25N10, B2N65, B4N60, B4N65, B4N80, B50N06, B5N50, B5N65

Keywords - DH020N03E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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