All MOSFET. B2N65 Datasheet

 

B2N65 Datasheet and Replacement


   Type Designator: B2N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO251
 

 B2N65 substitution

   - MOSFET ⓘ Cross-Reference Search

 

B2N65 Datasheet (PDF)

 ..1. Size:1148K  cn wxdh
 b2n65.pdf pdf_icon

B2N65

B2N652A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 2ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=4.6 Fast switching ESD improved capability

 0.1. Size:1308K  cn vbsemi
 vbzmb2n65.pdf pdf_icon

B2N65

VBZMB2N65www.VBsemi.comN-Channel (D-S) Power MOSFET650V FEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.7RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5

Datasheet: DH012N03U , DH019N04F , DH019N04I , DH020N03 , DH020N03B , DH020N03D , DH020N03E , B25N10 , AO3407 , B4N60 , B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 .

History: PTS2017 | SI4N60-TM3-T

Keywords - B2N65 MOSFET datasheet

 B2N65 cross reference
 B2N65 equivalent finder
 B2N65 lookup
 B2N65 substitution
 B2N65 replacement

 

 
Back to Top

 


 
.