B2N65 PDF and Equivalents Search

 

B2N65 Specs and Replacement

Type Designator: B2N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO251

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B2N65 datasheet

 ..1. Size:1148K  cn wxdh
 b2n65.pdf pdf_icon

B2N65

B2N65 2A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 2A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =4.6 Fast switching ESD improved capability ... See More ⇒

 0.1. Size:1308K  cn vbsemi
 vbzmb2n65.pdf pdf_icon

B2N65

VBZMB2N65 www.VBsemi.com N-Channel (D-S) Power MOSFET 650V FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.7 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 11 Ruggedness Qgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 5... See More ⇒

Detailed specifications: DH012N03U, DH019N04F, DH019N04I, DH020N03, DH020N03B, DH020N03D, DH020N03E, B25N10, AO4407A, B4N60, B4N65, B4N80, B50N06, B5N50, B5N65, B630, B640

Keywords - B2N65 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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