DATD063N06N Datasheet and Replacement
Type Designator: DATD063N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 263 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO252
DATD063N06N substitution
DATD063N06N Datasheet (PDF)
datd063n06n.pdf

DATD063N06N80A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.7mDS(on) (TYP)Gstandard.1I =80 AD3 S2 Features AEC-Q101 qualified MSL1 up to 260C peak reflow 17
Datasheet: B50N06 , B5N50 , B5N65 , B630 , B640 , B740 , B7N70 , B80N06 , 50N06 , DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , DH009N02P .
History: IRL3303PBF | RU3020L
Keywords - DATD063N06N MOSFET datasheet
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History: IRL3303PBF | RU3020L



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