All MOSFET. DATD063N06N Datasheet

 

DATD063N06N Datasheet and Replacement


   Type Designator: DATD063N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: TO252
 

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DATD063N06N Datasheet (PDF)

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DATD063N06N

DATD063N06N80A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.7mDS(on) (TYP)Gstandard.1I =80 AD3 S2 Features AEC-Q101 qualified MSL1 up to 260C peak reflow 17

Datasheet: B50N06 , B5N50 , B5N65 , B630 , B640 , B740 , B7N70 , B80N06 , 50N06 , DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , DH009N02P .

History: PHD37N06LT | SGB100N025 | AM20N10-350D | OSG65R022H4T3ZF

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