DATD063N06N Datasheet and Replacement
Type Designator: DATD063N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 63 nC
trⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 263 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO252
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DATD063N06N Datasheet (PDF)
..1. Size:859K cn wxdh
datd063n06n.pdf
datd063n06n.pdf
DATD063N06N80A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.7mDS(on) (TYP)Gstandard.1I =80 AD3 S2 Features AEC-Q101 qualified MSL1 up to 260C peak reflow 17
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