DATD063N06N PDF and Equivalents Search

 

DATD063N06N Specs and Replacement

Type Designator: DATD063N06N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 263 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm

Package: TO252

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DATD063N06N datasheet

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DATD063N06N

DATD063N06N 80A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.7m DS(on) (TYP) G standard. 1 I =80 A D 3 S 2 Features AEC-Q101 qualified MSL1 up to 260 C peak reflow 17... See More ⇒

Detailed specifications: B50N06, B5N50, B5N65, B630, B640, B740, B7N70, B80N06, 50N06, DATP057N06N, DH009N02, DH009N02B, DH009N02D, DH009N02E, DH009N02F, DH009N02I, DH009N02P

Keywords - DATD063N06N MOSFET specs

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