DH009N02B MOSFET Datasheet: N-Ch, 20V, 310A. Full specification with pinout and replacement list

DH009N02B Specs and Replacement

Type Designator: DH009N02B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 310 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 1386 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: TO251

DH009N02B substitution

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DH009N02B datasheet

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dh009n02 dh009n02f dh009n02i dh009n02e dh009n02b dh009n02d.pdf pdf_icon

DH009N02/DH009N02F/DH009N02I DH009N02E/DH009N02B/DH009N02D 310A 20V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 20V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1.35m DS(on) (TYP) standard. 1 3 S I = 310A D 2 Features Low on res... See More ⇒

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DH009N02P 220A 20V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 20V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 1m DS(on) (TYP) standard. 1 3 S I = 220A D 2 Features Low on resistance Low gate charge Fast switching L... See More ⇒

Detailed specifications: B630, B640, B740, B7N70, B80N06, DATD063N06N, DATP057N06N, DH009N02, IRF640, DH009N02D, DH009N02E, DH009N02F, DH009N02I, DH009N02P, DH012N03, DH012N03B, D12N06