DCC080M120A Specs and Replacement

Type Designator: DCC080M120A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm

Package: TO247

DCC080M120A substitution

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DCC080M120A datasheet

 ..1. Size:849K  cn wxdh
 dcc080m120a dccf080m120a2.pdf pdf_icon

DCC080M120A

DCC080M120A/ DCCF080M120A2 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freque... See More ⇒

Detailed specifications: DH020N03P, DCC016M120G2, DCC016M120G3, DCC020M65G2, DCC030M120G2, DCC040M65G2, DCC060M65G2, DCC075M120G2C, AON7506, DCC160M120G1, DCCF016M120G2, DCCF016M120G3, DCCF020M65G2, DH100P40D, DH100P40E, DH100P40F, DH100P40I

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs