All MOSFET. DCC080M120A Datasheet

 

DCC080M120A Datasheet and Replacement


   Type Designator: DCC080M120A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO247
 

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DCC080M120A Datasheet (PDF)

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DCC080M120A

DCC080M120A/ DCCF080M120A2 36A 1200V N-channel SIC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Freque

Datasheet: DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 , DCC075M120G2C , IRFP250 , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 , DH100P40D , DH100P40E , DH100P40F , DH100P40I .

History: APT34M60B | CS12N70A8H | NTMFS4854NST1G | STN3414 | BUK9K18-40E | CS6N70F | YJG90G10A

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