DH105N07P Datasheet and Replacement
Type Designator: DH105N07P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 174 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN5X6-8L
DH105N07P substitution
DH105N07P Datasheet (PDF)
dh105n07p.pdf

DH105N07P56A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10mDS(on) (TYP)standard.13 SI = 56AD2 Features Low on resistance Low gate charge Fast switching
dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf

DH105N07/DH105N07F/DH105N07I/DH105N07E/DH105N07B/DH105N07D60A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resi
Datasheet: DH100P70F , DH100P70I , DH105N07 , DH105N07B , DH105N07D , DH105N07E , DH105N07F , DH105N07I , IRF2807 , DH4N150B , DH4N150F , DH500P06R , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B .
History: IXTV230N085TS | 17P10G-TF1-T | HY15P03S | CTD03P030 | HM2809DR | AP6680AGM-HF
Keywords - DH105N07P MOSFET datasheet
DH105N07P cross reference
DH105N07P equivalent finder
DH105N07P lookup
DH105N07P substitution
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History: IXTV230N085TS | 17P10G-TF1-T | HY15P03S | CTD03P030 | HM2809DR | AP6680AGM-HF



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