DH105N07P Datasheet and Replacement
Type Designator: DH105N07P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 56 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 174 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN5X6-8L
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DH105N07P Datasheet (PDF)
dh105n07p.pdf

DH105N07P56A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10mDS(on) (TYP)standard.13 SI = 56AD2 Features Low on resistance Low gate charge Fast switching
dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf

DH105N07/DH105N07F/DH105N07I/DH105N07E/DH105N07B/DH105N07D60A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 1N60L-TMS4-T | AF2301PWL | AP3P7R0EMT | 17P10G-TF1-T | IPI076N12N3 | HSCE2530 | SL4449A
Keywords - DH105N07P MOSFET datasheet
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History: 1N60L-TMS4-T | AF2301PWL | AP3P7R0EMT | 17P10G-TF1-T | IPI076N12N3 | HSCE2530 | SL4449A



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