All MOSFET. DH105N07P Datasheet

 

DH105N07P Datasheet and Replacement


   Type Designator: DH105N07P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 174 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: DFN5X6-8L
 

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DH105N07P Datasheet (PDF)

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DH105N07P

DH105N07P56A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10mDS(on) (TYP)standard.13 SI = 56AD2 Features Low on resistance Low gate charge Fast switching

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 dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf pdf_icon

DH105N07P

DH105N07/DH105N07F/DH105N07I/DH105N07E/DH105N07B/DH105N07D60A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resi

Datasheet: DH100P70F , DH100P70I , DH105N07 , DH105N07B , DH105N07D , DH105N07E , DH105N07F , DH105N07I , IRF2807 , DH4N150B , DH4N150F , DH500P06R , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B .

History: IXTV230N085TS | 17P10G-TF1-T | HY15P03S | CTD03P030 | HM2809DR | AP6680AGM-HF

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