DH4N150B Datasheet and Replacement
Type Designator: DH4N150B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 98 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
Package: TO247
DH4N150B substitution
DH4N150B Datasheet (PDF)
dh4n150b.pdf
DH4N150B4A 1500V N-channel Enhancement Mode Power MOSFET1 DescriptionDH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 1500Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)
dh4n150f.pdf
DH4N150F4A 1500V N-channel Enhancement Mode Power MOSFET1 DescriptionDH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 1500Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)
Datasheet: DH100P70I , DH105N07 , DH105N07B , DH105N07D , DH105N07E , DH105N07F , DH105N07I , DH105N07P , IRFZ24N , DH4N150F , DH500P06R , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B , DH8004D .
History: MTB2D5N03BH8 | 24NM60G-TQ2-R | AONS36303 | AOY66923 | APT5020BVR | IRFPC50PBF
Keywords - DH4N150B MOSFET datasheet
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DH4N150B substitution
DH4N150B replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: MTB2D5N03BH8 | 24NM60G-TQ2-R | AONS36303 | AOY66923 | APT5020BVR | IRFPC50PBF
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