All MOSFET. DH500P06R Datasheet

 

DH500P06R Datasheet and Replacement


   Type Designator: DH500P06R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: PDFN3X3-8L
 

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DH500P06R Datasheet (PDF)

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DH500P06R

DH500P06R12A 60V P-channel Enhancement Mode Power MOSFET1 DescriptionThese P-channel enhanced vdmosfets, used advancedV = -60VDSStrench technology and design, provide to excellentRdson with low gate charge. Which accords with theR =52mDS(on) (TYP)RoHS standard.I = -12AD2 Features Fast switching Low on resistance Low gate charge Low reverse transfe

Datasheet: DH105N07B , DH105N07D , DH105N07E , DH105N07F , DH105N07I , DH105N07P , DH4N150B , DH4N150F , K2611 , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B , DH8004D , DH80N08B22 , DH8290 .

History: SI4622DY | VBZL80N03

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