DH60N06 Specs and Replacement

Type Designator: DH60N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 149 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220

DH60N06 substitution

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DH60N06 datasheet

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DH60N06

DH60N06 60A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.3m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DH105N07F, DH105N07I, DH105N07P, DH4N150B, DH4N150F, DH500P06R, DH50N06FZC, DH50N15, AO3400A, DH8004, DH8004B, DH8004D, DH80N08B22, DH8290, DH850N10, DH850N10B, DH850N10D

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