All MOSFET. DH60N06 Datasheet

 

DH60N06 Datasheet and Replacement


   Type Designator: DH60N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 149 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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DH60N06 Datasheet (PDF)

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DH60N06

DH60N0660A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching

Datasheet: DH105N07F , DH105N07I , DH105N07P , DH4N150B , DH4N150F , DH500P06R , DH50N06FZC , DH50N15 , RU6888R , DH8004 , DH8004B , DH8004D , DH80N08B22 , DH8290 , DH850N10 , DH850N10B , DH850N10D .

History: FS16VS-5 | TSF7N80M

Keywords - DH60N06 MOSFET datasheet

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