All MOSFET. DH150N12E Datasheet

 

DH150N12E Datasheet and Replacement


   Type Designator: DH150N12E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO263
 

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DH150N12E Datasheet (PDF)

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DH150N12E

DH150N12/DH150N12F/DH150N12IDH150N12E/DH150N12B/DH150N12D50A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 15.0mDS(on) (TYP)standard.13 SI = 50AD2 Features Low on res

Datasheet: DH850N10 , DH850N10B , DH850N10D , DH850N10E , DH850N10F , DH150N12 , DH150N12B , DH150N12D , RU7088R , DH150N12F , DH150N12I , DH160P03V , DH160P04D , DH16N06 , DH170P04V , DH1K1N10 , DH1K1N10B .

History: 25N10G-TF3-T

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