All MOSFET. DH160P03V Datasheet

 

DH160P03V Datasheet and Replacement


   Type Designator: DH160P03V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 308 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
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DH160P03V Datasheet (PDF)

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DH160P03V

DH160P03V10A 30V P-channel Enhancement Mode Power MOSFET1 DescriptionThis P-channel enhanced vdmosfets, used advancedV = -30VDSStrench technology and design, provide to excellent Rdsonwith low gate charge. Which accords with the RoHSR =14mDS(on) (TYP)standard.I = -10AD2 Features Fast switching Low on resistance Low gate charge Low reverse transfer

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DH160P03V

DH160P04D-50A -40V P-channel Enhancement Mode Power MOSFET1 DescriptionThe P-channel enhancement mode power mosfets usedV = -40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 13mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse tr

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CSD15571Q2 | SL2343 | PTP16N65 | JSM7240 | BSZ011NE2LS5I | N6004NZ | AFN1034

Keywords - DH160P03V MOSFET datasheet

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