All MOSFET. DH160P04D Datasheet

 

DH160P04D Datasheet and Replacement


   Type Designator: DH160P04D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 82 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO252
 

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DH160P04D Datasheet (PDF)

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DH160P04D

DH160P04D-50A -40V P-channel Enhancement Mode Power MOSFET1 DescriptionThe P-channel enhancement mode power mosfets usedV = -40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 13mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse tr

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DH160P04D

DH160P03V10A 30V P-channel Enhancement Mode Power MOSFET1 DescriptionThis P-channel enhanced vdmosfets, used advancedV = -30VDSStrench technology and design, provide to excellent Rdsonwith low gate charge. Which accords with the RoHSR =14mDS(on) (TYP)standard.I = -10AD2 Features Fast switching Low on resistance Low gate charge Low reverse transfer

Datasheet: DH850N10F , DH150N12 , DH150N12B , DH150N12D , DH150N12E , DH150N12F , DH150N12I , DH160P03V , AO4468 , DH16N06 , DH170P04V , DH1K1N10 , DH1K1N10B , DH1K1N10D , DH1K1N10E , DH1K1N10F , DH1K1N10I .

History: TDM3466 | IXTT140N10P | SSF2341E | STD35NF3LLT4 | PMN30XP | IRFS9630 | SVS5N70DTR

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