All MOSFET. DH160P04D Datasheet

 

DH160P04D Datasheet and Replacement


   Type Designator: DH160P04D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 82 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO252
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DH160P04D Datasheet (PDF)

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DH160P04D

DH160P04D-50A -40V P-channel Enhancement Mode Power MOSFET1 DescriptionThe P-channel enhancement mode power mosfets usedV = -40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 13mDS(on) (TYP)standard.I = -50AD2 Features Low on resistance Low gate charge Fast switching Low reverse tr

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DH160P04D

DH160P03V10A 30V P-channel Enhancement Mode Power MOSFET1 DescriptionThis P-channel enhanced vdmosfets, used advancedV = -30VDSStrench technology and design, provide to excellent Rdsonwith low gate charge. Which accords with the RoHSR =14mDS(on) (TYP)standard.I = -10AD2 Features Fast switching Low on resistance Low gate charge Low reverse transfer

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1639 | SVG104R5NSTR | KF5N50IZ | GSM4936S | 2N4224 | KF10N65F | ATM2N65TE

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