All MOSFET. DH170P04V Datasheet

 

DH170P04V Datasheet and Replacement


   Type Designator: DH170P04V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 6.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
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DH170P04V Datasheet (PDF)

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DH170P04V

DH170P04V-10A -40V P-channel Enhancement Mode Power MOSFET1 DescriptionThe P-channel enhancement mode power mosfets usedV = -40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 16mDS(on) (TYP)standard.I = -10AD2 Features Low on resistance Low gate charge Fast switching Low reverse tr

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQPF12P10 | IRLU9343PBF | 2SK3437 | 2N5522 | IRF9310 | 15NM70L-TF34-T | VST012N06MS

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