DH170P04V Specs and Replacement

Type Designator: DH170P04V

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

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DH170P04V datasheet

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DH170P04V

DH170P04V -10A -40V P-channel Enhancement Mode Power MOSFET 1 Description The P-channel enhancement mode power mosfets used V = -40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 16m DS(on) (TYP) standard. I = -10A D 2 Features Low on resistance Low gate charge Fast switching Low reverse tr... See More ⇒

Detailed specifications: DH150N12B, DH150N12D, DH150N12E, DH150N12F, DH150N12I, DH160P03V, DH160P04D, DH16N06, AO4468, DH1K1N10, DH1K1N10B, DH1K1N10D, DH1K1N10E, DH1K1N10F, DH1K1N10I, DH300N08, DH300N08B

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