All MOSFET. DH170P04V Datasheet

 

DH170P04V Datasheet and Replacement


   Type Designator: DH170P04V
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

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DH170P04V Datasheet (PDF)

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DH170P04V

DH170P04V-10A -40V P-channel Enhancement Mode Power MOSFET1 DescriptionThe P-channel enhancement mode power mosfets usedV = -40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 16mDS(on) (TYP)standard.I = -10AD2 Features Low on resistance Low gate charge Fast switching Low reverse tr

Datasheet: DH150N12B , DH150N12D , DH150N12E , DH150N12F , DH150N12I , DH160P03V , DH160P04D , DH16N06 , IRFP064N , DH1K1N10 , DH1K1N10B , DH1K1N10D , DH1K1N10E , DH1K1N10F , DH1K1N10I , DH300N08 , DH300N08B .

History: 2SK1436 | VBFB165R07S | HFS10N60S | PTD4N60 | SLF2N65UZ | HM25N08D | AM20P15-295D

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