All MOSFET. DH1K1N10D Datasheet

 

DH1K1N10D Datasheet and Replacement


   Type Designator: DH1K1N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO252
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DH1K1N10D Datasheet (PDF)

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DH1K1N10D

DH1K1N10/DH1K1N10F/DH1K1N10IDH1K1N10E/DH1K1N10B/DH1K1N10D12A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 112mDS(on) (TYP)standard.13 SID =12A2 Features Low on resista

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WFF5N65B | IRF7665S2TRPBF | IRFU320 | SVD50N06T | MTB60N06L3 | 2SJ460 | IRHM9130

Keywords - DH1K1N10D MOSFET datasheet

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