All MOSFET. FCI25N60N Datasheet

 

FCI25N60N Datasheet and Replacement


   Type Designator: FCI25N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 216 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO262 I2PAK
 

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FCI25N60N Datasheet (PDF)

 ..1. Size:598K  fairchild semi
 fci25n60n.pdf pdf_icon

FCI25N60N

November 2013FCI25N60NN-Channel SupreMOS MOSFET600 V, 25 A, 125 mFeatures DescriptionThe SupreMOS MOSFET is Fairchild Semiconductors next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 Ageneration of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC)employing a deep trench filling process that differentiates it from Low Ef

 ..2. Size:421K  fairchild semi
 fci25n60n f102.pdf pdf_icon

FCI25N60N

June 2010 TMSupreMOSFCI25N60N_F102tmN-Channel MOSFET 600V, 25A, 0.125Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC)process that differentiates it from preceding multi-epi based tech-

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History: FQD5N15

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