FCI25N60N PDF Specs and Replacement
Type Designator: FCI25N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 216 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO262 I2PAK
FCI25N60N substitution
FCI25N60N PDF Specs
fci25n60n.pdf
November 2013 FCI25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 125 m Features Description The SupreMOS MOSFET is Fairchild Semiconductor s next RDS(on) = 107 m (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from Low Ef... See More ⇒
fci25n60n f102.pdf
June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125 Features Description RDS(on) = 0.107 ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-... See More ⇒
Detailed specifications: FQPF8N80C , FQD5N15 , FQPF8N90C , FQPF9N25C , FQPF9N50CF , FQPF9N90C , FQPF9P25 , FQS4900 , IRF830 , FQS4901 , FCP25N60N , FQS4903 , FQT13N06 , FQT13N06L , FQT1N60C , HUF76413DKF085 , FQT1N80 .
Keywords - FCI25N60N MOSFET specs
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