DH026N06I Specs and Replacement

Type Designator: DH026N06I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 238 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 255 nS

Cossⓘ - Output Capacitance: 685 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO262

DH026N06I substitution

- MOSFET ⓘ Cross-Reference Search

 

DH026N06I datasheet

 ..1. Size:1437K  cn wxdh
 dh026n06 dh026n06f dh026n06i dh026n06e dh026n06d dh026n06b.pdf pdf_icon

DH026N06I

DH026N06/DH026N06F/DH026N06I/ DH026N06E/DH026N06D/DH026N06B 238A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 2.6m DS(on) (Type) G standard. 1 I = 238A 3 S D 2 Features Low on res... See More ⇒

Detailed specifications: DH400P06LB, DH400P06LD, DH025N08, DH026N06, DH026N06B, DH026N06D, DH026N06E, DH026N06F, 75N75, DH028N03, DH028N03B, DH028N03D, DH028N03E, DH028N03F, DH028N03I, DH029N08, DH029N08B

Keywords - DH026N06I MOSFET specs

 DH026N06I cross reference

 DH026N06I equivalent finder

 DH026N06I pdf lookup

 DH026N06I substitution

 DH026N06I replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs