All MOSFET. DH026N06I Datasheet

 

DH026N06I Datasheet and Replacement


   Type Designator: DH026N06I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 238 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 255 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO262
 

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DH026N06I Datasheet (PDF)

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DH026N06I

DH026N06/DH026N06F/DH026N06I/DH026N06E/DH026N06D/DH026N06B238A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 2.6mDS(on) (Type)Gstandard.1I = 238A3 S D2 Features Low on res

Datasheet: DH400P06LB , DH400P06LD , DH025N08 , DH026N06 , DH026N06B , DH026N06D , DH026N06E , DH026N06F , IRF520 , DH028N03 , DH028N03B , DH028N03D , DH028N03E , DH028N03F , DH028N03I , DH029N08 , DH029N08B .

History: IRFSL4710PBF | AUIRFU4615 | AOB66919L | SSF2610E | 2SK1064 | TPCA8027-H | HGN080N10AL

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