All MOSFET. DH028N03E Datasheet

 

DH028N03E Datasheet and Replacement


   Type Designator: DH028N03E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 145 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 118 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO263
 

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DH028N03E Datasheet (PDF)

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DH028N03E

DH028N03/DH028N03F/DH028N03EDH028N03I/DH028N03B/DH028N03D145A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.7mDS(on) (TYP)standard.13 SI = 145AD2 Features Low on resi

Datasheet: DH026N06B , DH026N06D , DH026N06E , DH026N06F , DH026N06I , DH028N03 , DH028N03B , DH028N03D , NCEP15T14 , DH028N03F , DH028N03I , DH029N08 , DH029N08B , DH029N08D , DH100P28 , DH100P28B , DH100P28D .

History: CSD19536KCS | RQJ0305EQDQA | MTP3N40 | P057AAT | AON6266 | KRLML6401 | F5042

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