All MOSFET. DH029N08B Datasheet

 

DH029N08B Datasheet and Replacement


   Type Designator: DH029N08B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO247
 

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DH029N08B Datasheet (PDF)

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DH029N08B

DH029N08/DHI029N08/DHE029N08/DH029N08D/DH029N08B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.9mDS(on) (Type)12 Features3 S I = 180AD Fast switching L

Datasheet: DH026N06I , DH028N03 , DH028N03B , DH028N03D , DH028N03E , DH028N03F , DH028N03I , DH029N08 , IRF1405 , DH029N08D , DH100P28 , DH100P28B , DH100P28D , DH100P28E , DH100P28F , DH100P28I , DH100P30A .

History: AON6206 | IRFSL3107PBF | HMS21N60F | SI1013X

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