All MOSFET. DH030N03P Datasheet

 

DH030N03P Datasheet and Replacement


   Type Designator: DH030N03P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 96 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 392 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6-8L
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DH030N03P Datasheet (PDF)

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DH030N03P

DH030N03P96A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.1mDS(on) (TYP)standard.13 SI =96 AD2 Features Low on resistance Low gate charge Fast switching

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History: SQ9407EY-T1 | CHM85A3PAGP | ALD1103DB | SML100L16 | ZXM66P03N8 | TK7P65W

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