DH030N03P Datasheet and Replacement
Type Designator: DH030N03P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 392 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN5X6-8L
DH030N03P substitution
DH030N03P Datasheet (PDF)
dh030n03p.pdf

DH030N03P96A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 3.1mDS(on) (TYP)standard.13 SI =96 AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: DH100P30AD , DH100P30AE , DH100P30AF , DH100P30AI , DH100P30C , DH100P30CB , DH100P30CD , DH100P30CE , 20N60 , DH033N03 , DH033N03B , DH033N03D , DH033N03E , DH033N03F , DH033N03I , DH033N03R , DH033N04 .
History: HFS730 | SQ2308CES | CED4060AL | P2020YD
Keywords - DH030N03P MOSFET datasheet
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History: HFS730 | SQ2308CES | CED4060AL | P2020YD



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