DH030N03P Specs and Replacement

Type Designator: DH030N03P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 392 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6-8L

DH030N03P substitution

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DH030N03P datasheet

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DH030N03P

DH030N03P 96A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.1m DS(on) (TYP) standard. 1 3 S I =96 A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DH100P30AD, DH100P30AE, DH100P30AF, DH100P30AI, DH100P30C, DH100P30CB, DH100P30CD, DH100P30CE, IRF840, DH033N03, DH033N03B, DH033N03D, DH033N03E, DH033N03F, DH033N03I, DH033N03R, DH033N04

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