All MOSFET. DH116N08E Datasheet

 

DH116N08E Datasheet and Replacement


   Type Designator: DH116N08E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 175 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TO263
 

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DH116N08E Datasheet (PDF)

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DH116N08E

DH116N08/DH116N08F/DH116N08I/DH116N08E/DH116N08B/DH116N08D49A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 11.6mDS(on) (TYP)standard.13 SI = 49AD2 Features Low on resi

Datasheet: DH100P35F , DH100P35I , DH100P40 , DH10H035R , DH10H037R , DH116N08 , DH116N08B , DH116N08D , IRF1010E , DH116N08F , DH116N08I , ZM019N03N , DH045N04 , DH045N04B , DH045N04D , DH045N04E , DH045N04F .

History: RFP5P12 | IRF820ASPBF

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