ZM019N03N Datasheet and Replacement

   Type Designator: ZM019N03N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 650 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: DFN5X6
      - MOSFET Cross-Reference Search