ZM019N03N Specs and Replacement

Type Designator: ZM019N03N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: DFN5X6

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ZM019N03N datasheet

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ZM019N03N

ZM019N03N ZMJ SEMICONDUCTOR CO., LTD 30V N-Channel Power MOSFET General Description Product Summary The ZM019N03N combines advanced trench V =30V DS MOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON) R =1.7m DS(ON) for load switch and battery protection applications. I =115A D Features Advance hi... See More ⇒

Detailed specifications: DH10H035R, DH10H037R, DH116N08, DH116N08B, DH116N08D, DH116N08E, DH116N08F, DH116N08I, AO3401, DH045N04, DH045N04B, DH045N04D, DH045N04E, DH045N04F, DH045N04I, DH045N04P, DH045N06

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.