All MOSFET. ZM019N03N Datasheet

 

ZM019N03N Datasheet and Replacement


   Type Designator: ZM019N03N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: DFN5X6
 

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ZM019N03N Datasheet (PDF)

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ZM019N03N

ZM019N03N ZMJ SEMICONDUCTOR CO., LTD 30V N-Channel Power MOSFET General Description Product Summary The ZM019N03N combines advanced trench V =30V DSMOSFET technology with a low resistance package to provide extremely low R . This device is ideal DS(ON)R =1.7m DS(ON) for load switch and battery protection applications. I =115A D Features Advance hi

Datasheet: DH10H035R , DH10H037R , DH116N08 , DH116N08B , DH116N08D , DH116N08E , DH116N08F , DH116N08I , AO3400 , DH045N04 , DH045N04B , DH045N04D , DH045N04E , DH045N04F , DH045N04I , DH045N04P , DH045N06 .

History: 2SK1215F | TPB50R250C

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